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Electrical Characteristics of the IGBT T C
= 25 ° C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV CES
? B VCES /
? T J
I CES
I GES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V GE = 0V, I C = 250uA
V GE = 0V, I C = 1mA
V CE = V CES , V GE = 0V
V GE = V GES , V CE = 0V
600
--
--
--
--
0.6
--
--
--
--
250
± 100
V
V/ ° C
uA
nA
On Characteristics
V GE(th)
G-E Threshold Voltage
I C = 40mA, V CE = V GE
3.5
4.5
6.5
V
V CE(sat)
Collector to Emitter
Saturation Voltage
I C = 40A ,
I C = 80A ,
V GE = 15V
V GE = 15V
--
--
2.1
2.6
2.6
--
V
V
Dynamic Characteristics
C ies
C oes
C res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V CE = 30V , V GE = 0V,
f = 1MHz
--
--
--
2790
350
100
--
--
--
pF
pF
pF
Switching Characteristics
t d(on)
t r
Turn-On Delay Time
Rise Time
--
--
23
50
--
--
ns
ns
t d(off)
t f
E on
E off
E ts
t d(on)
t r
t d(off)
t f
E on
E off
E ts
Q g
Q ge
Q gc
L e
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn - On Switching Loss
Turn - Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
V CC = 300 V, I C = 40A,
R G = 5 ? , V GE = 15V,
Inductive Load, T C = 25 ° C
V CC = 300 V, I C = 40A,
R G = 5 ? , V GE = 15V ,
Inductive Load, T C = 125 ° C
V CE = 300 V, I C = 40A,
V GE = 15V
Measured 5mm from PKG
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
90
50
570
590
1160
30
55
150
160
630
940
1580
175
25
60
14
130
150
--
--
1500
--
--
200
250
--
--
2000
250
40
90
--
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
nH
Electrical Characteristics of DIODE T C
= 25 ° C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V FM
t rr
I rr
Q rr
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
I F = 25A
I F = 25A,
di/dt = 200A/us
T C = 25 ° C
T C = 100 ° C
T C = 25 ° C
T C = 100 ° C
T C = 25 ° C
T C = 100 ° C
T C = 25 ° C
T C = 100 ° C
--
--
--
--
--
--
--
--
1.4
1.3
50
105
4.5
8.5
112
420
1.7
--
95
--
10
--
375
--
V
ns
A
nC
?2002 Fairchild Semiconductor Corporation
SGH80N60UFD Rev. B1
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